Title :
Low Temperature Deposition of Hydrogenated Nanocrystalline Cubic Silicon Carbide Thin Films by HWCVD and VHF-PECVD
Author :
Miyajima, Shinsuke ; Sawamura, Makoto ; Yamada, Akira ; Konaga, Makoto
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol.
Abstract :
Hydrogenated nanocrystalline cubic silicon carbide (nc-SiC:H) films were successfully deposited on glass substrates at low substrate temperatures below 300 degC by hot wire chemical vapor deposition (HWCVD) and very high frequency plasma chemical vapor deposition (VHF-PECVD). We investigated structural properties of the films by spectroscopic ellipsometry and TEM observations. Photo-sensitivity of the films deposited by VHF-PECVD was higher than that of the films deposited by HWCVD. The secondary ion mass spectroscopy measurement revealed that the low photo-sensitivity of the films deposited by HWCVD was due to the metal contamination from the hot wires
Keywords :
hydrogen; nanostructured materials; photoconductivity; plasma CVD; secondary ion mass spectra; semiconductor thin films; silicon compounds; transmission electron microscopy; wide band gap semiconductors; HWCVD; SiC:H; TEM; VHF-PECVD; glass substrates; hot wire chemical vapor deposition; hydrogenated nanocrystalline cubic silicon carbide thin films; low temperature deposition; metal contamination; photosensitivity; secondary ion mass spectroscopy; spectroscopic ellipsometry; very high frequency plasma chemical vapor deposition; Chemical vapor deposition; Frequency; Glass; Plasma measurements; Plasma temperature; Semiconductor films; Semiconductor thin films; Silicon carbide; Sputtering; Wire;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279793
