Title :
MEMS based dual band power amplifier for software defined radio applications
Author :
Krishnan, R. Ramesh ; Kanthamani, S. ; Kumar, N. S Sasi ; Raju, Mrs S. ; Kumar, V. Abhai
Author_Institution :
ECE Dept., Thiagarajar Coll. of Eng., Madurai, India
Abstract :
Circuit re-configurability has received tremendous attention during the past years in the development of wireless communication systems. There has been considerable interest in the development of adaptive components which can be switched or tuned for various applications. This paper presents a novel design methodology of dual band RF power amplifier with an adaptive matching network using series SPST switches at input and output of the amplifier circuit. A dual-band GaAs FET amplifier is designed and simulated for the center frequency of 1.5 GHz and 3 GHz. The results obtained exhibits small signal gain of 15.7 dB and 11 dB with a bandwidth of 100 MHz at 1.5 GHz and 3 GHz respectively.
Keywords :
UHF power amplifiers; field effect transistor circuits; gallium arsenide; impedance matching; microswitches; software radio; 1.5 GHz; 100 MHz; 11 dB; 15.7 dB; 3 GHz; GaAs; GaAs FET amplifier; MEMS; RF power amplifier; adaptive components; adaptive matching network; circuit re-configurability; dual band power amplifier; series SPST switches; software defined radio; wireless communication systems; Application software; Circuits; Communication switching; Design methodology; Dual band; Micromechanical devices; Power amplifiers; Radiofrequency amplifiers; Software radio; Wireless communication;
Conference_Titel :
Personal Wireless Communications, 2005. ICPWC 2005. 2005 IEEE International Conference on
Print_ISBN :
0-7803-8964-6
DOI :
10.1109/ICPWC.2005.1431360
