Title :
Low Temperature Microcrystalline Silicon Solar Cells Prepared by Hot-Wire Chemical Vapor Deposition
Author :
Adachi, M.M. ; Tse, W.F.L. ; Karim, K.S.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC
Abstract :
Intrinsic hydrogenated microcrystalline silicon (muc-Si:H) films were prepared by hot-wire chemical vapor deposition (HWCVD) using a graphite filament at a substrate temperature of 210degC. Films were characterized by Raman Spectroscopy, FTIR and electrical conductivity measurements with varying silane concentrations on glass substrates. Solar cells were fabricated in a glass/SnO2/pin/Al structure and device efficiency was measured to be 2.8%
Keywords :
Fourier transform spectra; Raman spectra; chemical vapour deposition; electrical conductivity; elemental semiconductors; hydrogen; infrared spectra; semiconductor growth; semiconductor thin films; silicon; solar cells; 2.8 percent; 210 C; FTIR; HWCVD; Raman spectroscopy; Si:H; SiO2; SiO2-SnO2-Al; device efficiency; electrical conductivity; glass substrates; graphite filament; hot-wire chemical vapor deposition; intrinsic hydrogenated microcrystalline silicon films; microcrystalline silicon solar cells; silane concentrations; Chemical vapor deposition; Conductive films; Conductivity measurement; Glass; Photovoltaic cells; Raman scattering; Semiconductor films; Silicon; Spectroscopy; Temperature;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279800
