High-Speed Deposition of Microcrystalline Silicon by a Surface Wave Excited H2/SIH4 Plasma

Author

Toyoda, Hirotaka ; Hotta, Yoshihiko ; Okayasu, Takafumi ; Tkanishi, Yudai ; Sugai, Hideo

Author_Institution

Dept. of Electr. Eng., Nagoya Univ.

Volume

2

fYear

2006

fDate

38838

Firstpage

1635

Lastpage

1638

Abstract

Application of surface-wave excited plasma (SWP) source to the muc-Si film deposition is demonstrated. A new gas feed system is applied to a surface wave excited plasma source, where SiH₄ and H₂ are introduced into the vessel through a dielectric window. Influence of the substrate position on the film qualities such as crystalline volume fraction and deposition rate are investigated. Influence of dielectric materials (quartz and alumina) on the defect density of the muc-Si film is investigated, and superiority of the alumina window is demonstrated. Finally, muc-Si film deposition at a deposition rate of 6 nm/s is achieved with a defect density of ~1times10¹⁷ cm^-3

Keywords

alumina; dielectric materials; elemental semiconductors; plasma CVD; plasma sources; quartz; semiconductor thin films; silicon; Si; alumina; alumina window; crystalline volume fraction; defect density; dielectric materials; dielectric window; film deposition; high-speed deposition; microcrystalline silicon; plasma CVD; plasma density; quartz; surface wave excited plasma source; Crystallization; Dielectric materials; Dielectric substrates; Feeds; Hydrogen; Plasma applications; Plasma sources; Plasma waves; Silicon; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279801

Filename

4059967