Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding

Author

Lamponi, Marco ; Keyvaninia, S. ; Pommereau, Franck ; Brenot, Romain ; de Valicourt, G. ; Lelarge, F. ; Roelkens, Gunther ; Van Thourhout, Dries ; Messaoudene, S. ; Fedeli, J.-M. ; Duan, G.-H.

Author_Institution

Inst. d´´Electron. Fondamentale (IEF), Univ. Paris-Sud XI, Orsay, France

fYear

2010

fDate

1-3 Sept. 2010

Firstpage

22

Lastpage

24

Abstract

An InP/Silicon hybrid laser based on double taper adiabatic mode transfer and BCB bonding is demonstrated, exhibiting nearly 1 mW output power at room temperature in pulsed operation regime. Such a laser enables potentially a low threshold current and a high power conversion efficiency.

Keywords

III-V semiconductors; adhesive bonding; elemental semiconductors; indium compounds; integrated optics; optical fibre couplers; optical waveguides; quantum well lasers; silicon-on-insulator; wafer bonding; InP-Si; double taper adiabatic mode transfer; double tapered single-mode waveguides; fiber coupled output power; heterogeneously integrated InP-SOI laser; high power conversion efficiency; low threshold current; pulsed operation regime; single-mode adhesive die; temperature 293 K to 298 K; wafer bonding; Couplings; Fiber lasers; Indium phosphide; Laser modes; Optical waveguides; Silicon; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2010 7th IEEE International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-6344-2

Type

conf

DOI

10.1109/GROUP4.2010.5643441

Filename

5643441