DocumentCode
3204722
Title
A selective area metal bonding method for Si photonics light sources
Author
Hong, Tao ; Wang, Yang ; Yu, Hong-Yan ; Yue, Song ; Chen, Wei-Xi ; Liang, Song ; Li, Zhi ; Pan, Jiao-Qing ; Ran, Guang-Zhao
Author_Institution
State Key Lab. for Mesoscopic Phys., Peking Univ., Beijing, China
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
13
Lastpage
15
Abstract
A 1.55 μm hybrid InGaAsP-Si laser was fabricated by the selective area metal bonding method. Room temperature continuous lasing with a maximum output power of 0.45 mW is realized.
Keywords
III-V semiconductors; bonding processes; distributed feedback lasers; elemental semiconductors; gallium arsenide; indium compounds; light sources; quantum well lasers; silicon; waveguide lasers; InGaAsP-Si; continuous lasing; hybrid laser fabrication; multiple quantum well distributed feedback waveguide laser; photonics light sources; power 0.45 mW; selective area metal bonding method; temperature 293 K to 298 K; wavelength 1.55 mum; Bonding; Metals; Optical waveguides; Photonics; Pump lasers; Silicon; Waveguide lasers; InGaAsP-Si Laser; Selective area metal bonding (SAMB); Si photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643442
Filename
5643442
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