Title :
Towards a low-power nanophotonic semiconductor amplifier heterogeneously integrated with SOI waveguides
Author :
Roelkens, G. ; Raz, O. ; Green, W.M.J. ; Assefa, S. ; Tassaert, M. ; Keyvaninia, S. ; Vandoorne, K. ; Van Thourhout, D. ; Baets, R. ; Vlasov, Y.
Author_Institution :
Photonics Res. Group, Ghent Univ., Ghent, Belgium
Abstract :
In this paper we propose an optically pumped nanophotonic III-V semiconductor optical amplifier heterogeneously integrated on a silicon-on-insulator waveguide circuit through wafer bonding technology. 10μm long adiabatic tapers allow a full power transfer from the silicon waveguide layer to the III-V membrane. Low-power consumption is expected, given the high optical confinement in the 100nm thick III-V membrane waveguide, making it suitable for intra-chip optical interconnect networks. We report on the design and preliminary characterization of this novel type of high-index contrast nanophotonic device.
Keywords :
CMOS integrated circuits; III-V semiconductors; gallium arsenide; indium compounds; integrated optics; nanophotonics; optical design techniques; optical pumping; optical waveguides; semiconductor optical amplifiers; silicon-on-insulator; wafer bonding; III-V membrane waveguide; InGaAsP-InP-Si; SOI waveguides; adiabatic tapers; heterogeneously integrated amplifier; intrachip optical interconnect networks; optical design; optically pumped low-power nanophotonic III-V semiconductor optical amplifier; silicon-on-insulator waveguide circuit; size 10 mum; size 100 nm; wafer bonding; Optical amplifiers; Optical device fabrication; Optical pumping; Optical waveguides; Silicon; Silicon on insulator technology; Stimulated emission;
Conference_Titel :
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-6344-2
DOI :
10.1109/GROUP4.2010.5643443
