DocumentCode :
3204785
Title :
PVT robust design of wideband CT delta sigma modulators including finite GBW compensation
Author :
Kauffman, John G. ; Brückner, Timon ; Ortmanns, Maurits
Author_Institution :
Inst. of Microelectron., Univ. of Ulm, Ulm, Germany
fYear :
2012
fDate :
5-8 Aug. 2012
Firstpage :
382
Lastpage :
385
Abstract :
This paper demonstrates the effectiveness and robustness of amplifier finite gain bandwidth compensation within a wideband third order continuous time delta sigma modulator and the effects of process, mismatch and temperature on modulator stability. In many state of the art designs, GBW is kept safely above the sampling frequency of the modulator, which suffers a power penalty especially for high-speed designs. While gain errors and phase shifts in the loop filter due to finite GBW can be compensated for, its robustness is often questionable, especially if an additional excess loop delay is concerned. The robustness of such a compensation is analyzed for an exemplary CT DSM with an fS of 500MHz which has been designed in a 1.2V 90nm TSMC CMOS process. Therefore, the amplifiers are compensated for finite GBW values of 500 MHz, 300MHz and 600 MHz, and all three parasitic extracted amplifiers are analyzed over PVT. The simulated modulator performance of 72 dB SNDR over a 25MHz bandwidth is only degraded by 2 dB over corner simulations. In comparison to Monte Carlo analysis of all amplifiers, this reveals a modulator robustness to amplifier finite GBW as much as ±35% over process and mismatch, which emphasizes the feasibility of the approach.
Keywords :
CMOS integrated circuits; Monte Carlo methods; amplifiers; circuit stability; compensation; delta-sigma modulation; integrated circuit design; modulators; sampling methods; temperature; CT DSM; Monte Carlo analysis; PVT robust design; SNDR; TSMC CMOS process; amplifier finite GBW; amplifier finite gain bandwidth compensation; bandwidth 25 MHz; excess loop delay; finite GBW compensation; frequency 300 MHz; frequency 500 MHz; frequency 600 MHz; gain error; high-speed design; loop filter; modulator performance; modulator robustness; modulator stability; noise figure 72 dB; parasitic extracted amplifier; phase shift; power penalty; sampling frequency; size 90 nm; temperature; voltage 1.2 V; wideband CT delta sigma modulator; wideband third order continuous time delta sigma modulator; Analytical models; Ash; Bandwidth; Delay; Delta-sigma modulation; Modulation; Robustness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on
Conference_Location :
Boise, ID
ISSN :
1548-3746
Print_ISBN :
978-1-4673-2526-4
Electronic_ISBN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2012.6292037
Filename :
6292037
Link To Document :
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