DocumentCode
320480
Title
A new empirical model for GaAs FET in nonlinear circuit simulation
Author
Cao, J. ; Lin, F. ; Kooi, P.S. ; Leong, M.S.
Author_Institution
Inst. of Microelectron., Singapore
fYear
1997
fDate
2-5 Dec 1997
Firstpage
517
Abstract
By emphasizing the aspects of simplicity and accuracy for a GaAs FET modeling, a new empirical GaAs FET model is developed. Good agreement between simulated and measured data is obtained
Keywords
III-V semiconductors; Schottky gate field effect transistors; UHF field effect transistors; circuit analysis computing; gallium arsenide; microwave field effect transistors; nonlinear network analysis; semiconductor device models; GaAs; GaAs FET; MESFET; drain current model; empirical model; model verification; nonlinear circuit simulation; Circuit simulation; Computational modeling; Data mining; FETs; Gallium arsenide; Intrusion detection; MESFETs; Microelectronics; Nonlinear circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN
962-442-117-X
Type
conf
DOI
10.1109/APMC.1997.654592
Filename
654592
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