DocumentCode
3204802
Title
Monolithic Ge-on-Si lasers for integrated photonics
Author
Liu, Jifeng ; Sun, Xiaochen ; Camacho-Aguilera, Rodolfo ; Cai, Yan ; Kimerling, Lionel C. ; Michel, Jurgen
Author_Institution
Microphotonics Center, Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2010
fDate
1-3 Sept. 2010
Firstpage
1
Lastpage
3
Abstract
We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility of electrically pumped lasers.
Keywords
elemental semiconductors; germanium; integrated optics; monolithic integrated circuits; semiconductor heterojunctions; semiconductor lasers; waveguide lasers; Ge-Si; LED; Si; direct gap emission; double heterojunction structures; electrically pumped lasers; integrated photonics; room temperature monolithic lasers; temperature 293 K to 298 K; wavelength 1590 nm to 1610 nm; Heterojunctions; Optical pumping; Optical waveguides; Pump lasers; Silicon; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643446
Filename
5643446
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