Small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)

Author

Chen, Kevin J.

Author_Institution

Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong

fYear

1997

fDate

2-5 Dec 1997

Firstpage

529

Abstract

High-frequency small-signal and large-signal characteristics of a highly functional InP-based resonant-tunneling high electron mobility transistor (RTHEMT) are reported in this paper. Based on small-signal S-parameter measurement, a maximum current gain cutoff frequency f_T of 28.6 GHz and a maximum power gain cutoff frequency f_max of 90 GHz were obtained for an RTHEMT with a 0.7-μm gate length. Large-signal characteristics are also reported, showing the potential of RTHEMTs for frequency multiplier applications featuring high order harmonics multiplication with high conversion efficiency

Keywords

III-V semiconductors; S-parameters; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; resonant tunnelling transistors; 0.7 micron; 28.6 GHz; 90 GHz; InP; InP-based devices; RTHEMT; S-parameter measurement; frequency multiplier applications; high electron mobility transistors; high order harmonics multiplication; high-frequency characteristics; large-signal characteristics; resonant tunneling HEMT; small-signal characteristics; Current measurement; Cutoff frequency; Frequency measurement; Gain measurement; HEMTs; Length measurement; MODFETs; Power measurement; Resonant tunneling devices; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific

Print_ISBN

962-442-117-X

Type

conf

DOI

10.1109/APMC.1997.654595

Filename

654595