GaAs MMIC large tuning-range active bandpass filter using negative resistance circuit

Author

Tong, Tian ; Jinsheng, Luo ; Zuhua, Li ; Tangsheng, Chen ; Jinting, Lin

Author_Institution

Inst. of Microelectron., Xi´´an Jiaotong Univ., China

fYear

1997

fDate

2-5 Dec 1997

Firstpage

553

Abstract

A second order large tuning-range bandpass active filter has been developed with GaAs MMIC technique using negative resistance circuits and integrated planar Schottky diodes designed and optimized in theory developed by the authors. The filter has a 200 MHz 3 db-bandwidth and a 600 MHz tuning-range of centre frequency, from 1.6 GHz to 1 GHz, and occupies an area of 1.6×1.8 mm² on the wafer including all biasing elements

Keywords

III-V semiconductors; MESFET integrated circuits; UHF filters; UHF integrated circuits; active filters; band-pass filters; circuit tuning; field effect MMIC; gallium arsenide; integrated circuit design; negative resistance devices; varactors; 1 to 1.6 GHz; 200 MHz; GaAs; GaAs MMIC; MESFET; active bandpass filter; biasing elements; integrated planar Schottky diodes; large tuning-range filter; negative resistance circuit; second order active filter; Active filters; Band pass filters; Circuits; Gallium arsenide; MMICs; Microwave theory and techniques; Passive filters; Resonator filters; Schottky diodes; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific

Print_ISBN

962-442-117-X

Type

conf

DOI

10.1109/APMC.1997.654601

Filename

654601