Electrical Characterization of Silicon Layers Grown by Convection-Assisted Chemical Vapour Deposition (CoCVD)

Author

Grosch, M. ; Burkert, I. ; Kunz, T. ; Gazuz, V. ; Gawehns, N. ; Scheffler, M. ; Auer, R.

Author_Institution

Bavarian Center for Appl. Energy Res., Erlangen

Volume

2

fYear

2006

fDate

38838

Firstpage

1661

Lastpage

1663

Abstract

In this work, we present the electrical properties of thin epitaxial silicon layers grown by convection-assisted chemical vapour deposition (CoCVD). Mono-crystalline (100)-orientated Fz silicon wafers were used as test substrates. The thin layers were investigated by four-point-probing and Hall-measurement. Structural information was obtained by chemical etching with a Secco etchant. First solar cells with efficiencies of 11% were manufactured on 8.5mum-thick Si film and characterized

Keywords

Hall mobility; chemical vapour deposition; dislocations; electrical resistivity; elemental semiconductors; etching; semiconductor epitaxial layers; semiconductor growth; silicon; solar cells; stacking faults; 11 percent; 8.5 micron; CoCVD; Hall mobility; Hall-measurement; Secco etchant; Si; chemical etching; convection-assisted chemical vapour deposition; dislocations; electrical characterization; epitaxial silicon layers growth; four-point-probing; monocrystalline silicon wafers; solar cells; stacking faults; Charge carriers; Chemical vapor deposition; Conductivity; Etching; Fluid flow; Manufacturing; Photovoltaic cells; Silicon; Substrates; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279808

Filename

4059974