DocumentCode :
3204893
Title :
Properties of Nano-Crystalline Silicon Films for Top Solar Cells
Author :
Iwasita, Shinya ; Inoue, Toshihisa ; Koga, Kazunori ; Shiratani, Masaharu ; Nunomura, Shota ; Kondo, Michio
Author_Institution :
Dept. of Electron., Kyushu Univ., Fukuoka
Volume :
2
fYear :
2006
fDate :
38838
Firstpage :
1664
Lastpage :
1667
Abstract :
Nano-crystalline Si films are deposited using multi-hollow plasma CVD. The films have a wide optical band gap of 1.75 eV and a large absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density of 3times1015 cm-3 and show high stability against light soaking. These results suggest that nano-crystalline Si films are promising materials for top cells
Keywords :
absorption coefficients; elemental semiconductors; nanostructured materials; nanotechnology; optical constants; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; Si; absorption coefficient; defect density; multihollow plasma CVD; nanocrystalline silicon films; optical band gap; solar cells; Absorption; Crystalline materials; Crystallization; Grain size; Inductors; Optical films; Photovoltaic cells; Semiconductor films; Silicon; Size control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279809
Filename :
4059975
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3204893
بازگشت