Angular Distribution with Respect to Growth Direction of Microcrystalline Silicon Grown in Hybrid Phase

Author

Sobajima, Yasushi ; Nakano, Shinya ; Toyama, Toshihiko ; Okamoto, Hiroaki ; Honda, Shinya ; Minemoto, Takashi ; Takakura, Hiroyuki ; Hamakawa, Yoshihiro

Author_Institution

Dept. of Syst. Innovation, Osaka Univ.

Volume

2

fYear

2006

fDate

38838

Firstpage

1668

Lastpage

1671

Abstract

Angular distribution with respect to (220) growth direction of muc-Si method has been studied by employing thickness evolutions of X-ray pole figure measurements. The muc-Si films with the (220) preferential orientation were prepared by plasma enhanced chemical vapor deposition method at low substrate temperatures (~200degC). As for the Si(220) grains, the angular distribution of the tilt angle in the whole growth region was improved during deposition, yielding that the growth directions became almost parallel to the substrate normal with small tilt angles. The decrease in the angular of the Si(220) grains of whole region of film is discussed from the aspect of the hybrid-phase growth

Keywords

elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; silicon; texture; 200 C; Si; X-ray pole figure measurements; angular distribution; hybrid-phase growth; microcrystalline silicon films growth; plasma enhanced chemical vapor deposition method; preferential orientation; substrate temperatures; tilt angles; Glass; Plasma chemistry; Plasma measurements; Plasma temperature; Semiconductor thin films; Silicon; Substrates; Thickness measurement; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279810

Filename

4059976