Micro-Crystalline Silicon Thin Films Deposited by the Reactive RF Magnetron Sputtering System

Author

Oyama, Akinori ; Nakamura, Isao ; Isomura, Masao

Author_Institution

Dept. of Electr. & Electr. Eng., Tokai Univ., Kanagawa

Volume

2

fYear

2006

fDate

38838

Firstpage

1684

Lastpage

1687

Abstract

Hydrogenated micro-crystalline silicon (muc-Si:H) thin films were deposited by the RF magnetron sputtering system with argon and hydrogen mixture gases. The high-quality muc-Si:H films were successfully produced at 200degC. The dark conductivity of 5.5times10^-9 S/cm and two order of magnitude of photosensitivity were obtained with 100% hydrogen sputtering and the absorption coefficients are similar to those of single crystalline silicon. We consider that hydrogen in the sputter gases causes the chemical transport of growth species from targets to substrates. The significant reduction in crystallization temperature and the improvement of film qualities occur probably due to similar reactions to the plasma CVD process

Keywords

Raman spectra; absorption coefficients; electrical conductivity; elemental semiconductors; hydrogen; semiconductor growth; semiconductor thin films; silicon; sputter deposition; 200 C; Si:H; absorption coefficients; argon-hydrogen mixture gases; chemical transport; dark conductivity; hydrogen sputtering; hydrogenated microcrystalline silicon thin films; photosensitivity; plasma CVD process; reactive rf magnetron sputtering system; Argon; Conductivity; Crystallization; Gases; Hydrogen; Plasma temperature; Radio frequency; Semiconductor thin films; Silicon; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279814

Filename

4059980