Title :
Low-Temperature Fast Growth of Polycrystalline Silicon Thin Film from SiCl4 Light-Diluted Hydrogen by PECVD
Author :
Lin, Xuanying ; Huang, Rui ; Lin, Kuixun ; Yu, Yunpeng ; Wei, Junhong ; Zhu, Zusong
Author_Institution :
Dept. of Phys., Shantou Univ.
Abstract :
The polycrystalline silicon films deposited at a high deposition rate over 3.5Aring/S along with a crystalline fraction of 80% have been obtained using decomposing SiCl4 gas lightly diluted in hydrogen under low temperature of 200-300 by plasma enhanced chemical vapor deposition technique. The deposition rate and the crystalline fraction strongly depend not only on the if power, but also on the hydrogen dilution ratio. It is found that the higher growth rate crystalline fraction can be achieved using light-hydrogen dilution in contrast to SiH4/H2 gases and through the enhancement of the gas-phase reaction in SiCl4/H2 plasma by the optimum radio frequency power
Keywords :
elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; silicon; PECVD; Si; gas-phase reaction; light-diluted hydrogen; light-hydrogen dilution; plasma enhanced chemical vapor deposition technique; polycrystalline silicon thin film; radio frequency power; Chemical vapor deposition; Crystallization; Gases; Hydrogen; Plasma chemistry; Plasma temperature; Radio frequency; Semiconductor films; Semiconductor thin films; Silicon;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279818
