Title :
Calculation of the HF characteristics in high electron mobility transistors by considering capture and escape phenomena in the Monte Carlo technique
Author :
Abou-Khalil, M. ; Schreurs, D. ; Matsui, T. ; Wu, K.
Author_Institution :
CRL, Tokyo, Japan
Abstract :
The non-linear characteristics of an InP based lattice-matched HEMT are determined by Monte Carlo simulation. By considering the capture and escape phenomena as scattering events, carriers have higher energy values than in the case of classical treatment and therefore the drain-source current values differ by an amount of 30-40%
Keywords :
III-V semiconductors; Monte Carlo methods; S-parameters; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device models; 45 MHz to 26.5 GHz; HF characteristics; InP; InP based lattice-matched HEMT; Monte Carlo simulation; capture phenomena; drain-source current values; escape phenomena; high electron mobility transistors; nonlinear characteristics; scattering events; Carrier confinement; Energy capture; Energy states; HEMTs; Hafnium; MODFETs; Optical scattering; Particle scattering; Schottky barriers; Wave functions;
Conference_Titel :
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN :
962-442-117-X
DOI :
10.1109/APMC.1997.654637
