Title :
The large-signal model of AlGaAs/InGaAs Schottky varactor and it´s application on VCO design
Author :
Lim, Kok-Keong ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
An AlGaAs/InGaAs heterostructure Schottky varactor has been fabricated and characterized. Diodes with various anode sizes and fingers were realized to achieve a reasonable capacitance value for varactors. The large-signal model of the Schottky diode, which includes the I-V and C-V characteristics has also been established. Using this large-signal model, a voltage-controlled oscillator (VCO) operated at 548-576 MHz was realized by the optimal design on a FR4 substrate. The oscillation frequencies and output power are consistent with the simulated prediction, which demonstrates the importance of device large-signal model for circuit designs
Keywords :
III-V semiconductors; Schottky diodes; UHF diodes; UHF oscillators; aluminium compounds; equivalent circuits; gallium arsenide; indium compounds; semiconductor device models; varactors; voltage-controlled oscillators; 548 to 576 MHz; AlGaAs-InGaAs; AlGaAs/InGaAs Schottky varactor; C-V characteristics; FR4 substrate; I-V characteristics; VCO design application; heterostructure varactor; large-signal model; optimal design; voltage-controlled oscillator; Anodes; Capacitance; Capacitance-voltage characteristics; Fingers; Frequency; Indium gallium arsenide; Predictive models; Schottky diodes; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN :
962-442-117-X
DOI :
10.1109/APMC.1997.654638
