Title :
A quasi two-dimensional analytical model for threshold voltage of a modulation doped field effect transistor
Author :
Sen, Sujata ; Pandey, Manoj K. ; Khann, Manoj ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Delhi Univ., India
Abstract :
A two-dimensional analytical model for the threshold voltage of a subquarter-micrometer-gate Modulation Doped Field Effect Transistor (MODFET) is reported. The threshold voltage variation is obtained in terms of different device parameters. A very small shift in threshold voltage was observed supporting that the model suffers less from severe short channel effects. The model agrees well with the experimental data
Keywords :
high electron mobility transistors; microwave field effect transistors; semiconductor device models; 0.25 micron; HEMT; MODFET; device parameters; field effect transistor; modulation doped FET; quasi 2D analytical model; short channel effects; subquarter-micrometer-gate; threshold voltage; two-dimensional analytical model; Analytical models; Epitaxial layers; FETs; HEMTs; MODFET circuits; MODFET integrated circuits; Photonic band gap; Poisson equations; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN :
962-442-117-X
DOI :
10.1109/APMC.1997.654639
