Nonlinear-dispersive GaAs FET drain-current model for harmonic balance simulation

Author

Eccleston, KW

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore

fYear

1997

fDate

2-5 Dec 1997

Firstpage

717

Abstract

Popular GaAs FET large-signal drain conduction current models depend only on instantaneous terminal voltages, and ignore important phenomena that result in low frequency dispersion. To be valid at microwave frequencies, both the DC and time-varying components of current must be accurately modelled. This paper proposes a GaAs FET drain current model, which includes rate-dependent body and thermal effects, and therefore has the capability to accurately predict both the DC and time-varying components of drain current. Further, this model is particularly suited to harmonic balance simulation of microwave circuits

Keywords

III-V semiconductors; electric current; gallium arsenide; microwave circuits; microwave field effect transistors; nonlinear network analysis; semiconductor device models; DC component; FET drain-current model; GaAs; GaAs FET; harmonic balance simulation; low frequency dispersion; microwave circuits; microwave frequencies; nonlinear-dispersive drain-current model; rate-dependent body effects; thermal effects; time-varying component; Circuit simulation; Electromagnetic heating; Gallium arsenide; Microwave FETs; Microwave frequencies; Power dissipation; Predictive models; Radio frequency; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific

Print_ISBN

962-442-117-X

Type

conf

DOI

10.1109/APMC.1997.654642

Filename

654642