Title :
Base-collector heterojunction barrier effects at high current densities of Si/SiGe/Si heterojunction bipolar transistors
Author :
Song, Jiling ; Yuan, J.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
The excess electron barrier height at high current densities is examined. The barrier effects on the collector current, transconductance as well as base-collector junction capacitance are calculated. The analytical results are compared with the experimental data and device simulation results. Temperature-dependent characteristics are also evaluated
Keywords :
Ge-Si alloys; capacitance; current density; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; silicon; Si-SiGe-Si; Si-SiGe-Si HBTs; base-collector heterojunction barrier effects; base-collector junction capacitance; collector current; excess electron barrier height; heterojunction bipolar transistors; high current densities; temperature-dependent characteristics; transconductance; Analytical models; Capacitance; Charge carrier processes; Current density; Electrons; Germanium silicon alloys; Heterojunctions; Kirk field collapse effect; Silicon germanium; Transconductance;
Conference_Titel :
Southeastcon '98. Proceedings. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4391-3
DOI :
10.1109/SECON.1998.673317
