Simulation of electrothermal effects of HBT by TLM method

Author

Kangsheng, Chen ; Yang Wenhai

Author_Institution

Dept. of Inf. & Electron. Eng., Zhejiang Univ., Hangzhou, China

fYear

1997

fDate

2-5 Dec 1997

Firstpage

721

Abstract

An improved quasi two dimensional model, incorporating a depletion-layer approximation, to simulate electrothermal characteristics of a HBT is presented in this paper. In the model the temperature profile and minority carrier distribution are numerically simulated by transmission line matrix (TLM) method. The results show that this model can conveniently simulate the electrothermal effects under the efficient reduction both in CPU time and in memory space

Keywords

heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; minority carriers; power bipolar transistors; semiconductor device models; temperature distribution; thermal analysis; transmission line matrix methods; HBT; TLM method; depletion-layer approximation; electrothermal effects; minority carrier distribution; quasi 2D model; temperature profile; transmission line matrix method; two dimensional model; Computational modeling; Electrothermal effects; Gallium arsenide; Heterojunction bipolar transistors; Numerical simulation; Poisson equations; Power transmission lines; Temperature distribution; Transmission line matrix methods; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific

Print_ISBN

962-442-117-X

Type

conf

DOI

10.1109/APMC.1997.654643

Filename

654643