FinFET 3T and 3T1D dynamic RAM cells

In this study we present 3T and 3T1D DRAM cells designed using FinFET technology. Overall, the 3T DRAM cell has a 43.6% faster write speed than the 3T1D cell and uses less dynamic current (30.4% less write current and 14.6% less read current). The FinFET 3T1D DRAM cell offers a 16.7% faster read speed and 48.6% less read leakage current than the 3T1D cell. The 3T DRAM cell offers less variation in delays, up to 37% less than the 3T1D cell for write delay, due to parameter corner simulations. Overall for a system, the 3T FinFET DRAM cell is more promising due to its low dynamic current and significantly shorter write speed which leads to a smaller maximum delay.