• DocumentCode
    3205411
  • Title

    Paper-Thin InGaP/ GaAs Solar Cells

  • Author

    Takamoto, Tatsuya ; Kodama, Tomoya ; Yamaguchi, Hiroshi ; Agui, Takaaki ; Takahashi, Naoki ; Washio, Hidetoshi ; Hisamatsu, Tadashi ; Kaneiwa, Minoru ; Okamoto, Kohji ; Imaizumi, Mitsuru ; Kibe, Koichi

  • Author_Institution
    Solar Syst. Dev. Center, Sharp Corp., Nara
  • Volume
    2
  • fYear
    2006
  • fDate
    38838
  • Firstpage
    1769
  • Lastpage
    1772
  • Abstract
    A paper-thin, lightweight InGaP/GaAs solar cell with high efficiency and flexibility has been developed. A high-efficiency thin-film cell can be obtained for cell fabrication both before and after removing the substrate. Introducing a tunnel junction as the contact layer between the cell and metal film improves cell characteristics (Fill Factor (FF) and open-circuit voltage (Voc)). A highly doped n-type layer is necessary for good ohmic contact at the metal film interface. High radiation resistance of a thin-film cell was confirmed for a GaAs cell with a one-micron base layer. The thin-film cell was laminated for better handling. The laminated cell efficiency was about 22%. Anti-reflective coating is necessary on the laminate film to improve cell efficiency. A prototype unit panel using the laminated cells was developed for space application. An output power per weight of over 1W/g is possible for the unit panel. However, development of a bypass diode with thin-film structure is currently a problem, and reliability tests need to be performed for the unit panel
  • Keywords
    III-V semiconductors; antireflection coatings; gallium arsenide; metallic thin films; ohmic contacts; semiconductor device reliability; semiconductor thin films; solar cells; thin film devices; InGaP-GaAs; antireflective coating; bypass diode; doped n-type layer; flexibility; high radiation resistance; laminated cell efficiency; metal film; ohmic contact; open-circuit voltage; reliability tests; thin lightweight solar cells; tunnel junction; Coatings; Fabrication; Gallium arsenide; Laminates; Ohmic contacts; Photovoltaic cells; Prototypes; Substrates; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
  • Conference_Location
    Waikoloa, HI
  • Print_ISBN
    1-4244-0017-1
  • Electronic_ISBN
    1-4244-0017-1
  • Type

    conf

  • DOI
    10.1109/WCPEC.2006.279833
  • Filename
    4059999