Title :
Analysis for Radiation-Resistance of InGaP and GaAs Sub-Cells for InGaP/GaAs/Ge 3-Junction Solar Cells
Author :
Yamaguchi, Masafumi ; Ekins-Daukes, Nicholas J. ; Lee, Hae-Seok ; Sumita, Taishi ; Imaizumi, Mitsuru ; Takamoto, Tatsuya ; Agui, Takaaki ; Kaneiwa, Minoru ; Kamimura, Kunio ; Ohshima, Takeshi ; Itoh, Hisayoshi
Author_Institution :
Toyota Technol. Inst., Nagoya
Abstract :
The radiation resistance of individual InGaP and GaAs sub-cells is assessed as a function of base doping under low-energy proton irradiation. It is found that InGaP sub-cells with low base doping are the most radiation tolerant. However, in GaAs, carrier removal leads to a rapid degradation in sub-cells with low base doping and the most radiation hard sub-cell is achieved using a linearly graded base doping profile
Keywords :
III-V semiconductors; doping profiles; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; proton effects; semiconductor doping; solar cells; space power generation; 3-junction solar cells; InGaP-GaAs-Ge; doping profile; low-energy proton irradiation; radiation tolerance; radiation-resistance; Atomic measurements; Coatings; Degradation; Doping profiles; Electrons; Gallium arsenide; Photovoltaic cells; Protons; Research and development; Voltage;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279838
