R&D on III-V Compound Solar Cells for Space Application at TIPS

Author

Chen, Wenjun ; Du, Fusheng ; Sun, Qiang ; Xiao, Zhibin ; Qiao, Zaixiang ; Xu, Jun ; Sun, Yanzheng ; Xu, Shouyan

Author_Institution

Tianjin Inst. of Power Sources

Volume

2

fYear

2006

fDate

38838

Firstpage

1811

Lastpage

1814

Abstract

Driven by the market needs from high capacity telecommunication satellites, Tianjin Institute of Power Sources has made intensive efforts to develop GaAs based III-V compound solar cells in the last decade. A 20 KW/year production line was soon established and solar panels with GaAs/Ge single junction solar cells of excellent performance have been delivered for several telecommunication satellite projects. Meanwhile, successful research work in recent years on GaInP/GaInAs/Ge multijunction solar cells has resulted TIPS´s first generation of triplejunction product with average efficiency above 26.5%

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; research and development; semiconductor heterojunctions; solar cells; solar power satellites; space power generation; GaAs-Ge; GaInP-GaInAs-Ge; III-V compound solar cells; R&D; TIPS; Tianjin Institute of Power Source; multijunction solar cells; single junction solar cells; solar panels; space application; telecommunication satellites; triplejunction product; Artificial satellites; Distributed Bragg reflectors; Gallium arsenide; III-V semiconductor materials; Inductors; MOCVD; Photovoltaic cells; Production; Research and development; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

1-4244-0017-1

Electronic_ISBN

1-4244-0017-1

Type

conf

DOI

10.1109/WCPEC.2006.279844

Filename

4060010