DocumentCode
3205632
Title
Impact of technology on low-voltage CMOS and BiCMOS switching delay
Author
Davis, Kelly L. ; Yuan, J.S.
Author_Institution
Univ. of Central Florida, Orlando, FL, USA
fYear
1998
fDate
24-26 Apr 1998
Firstpage
170
Lastpage
173
Abstract
An alternative switching delay reduction technique for CMOS and BiCMOS digital circuits is examined. A simplified BSIM3V2 model equation is used to analyze CMOS inverter delay for different VDD, T ox, and VT. PSPICE BiCMOS delay results are presented over a wide range of VDD, Tox, and VT
Keywords
BiCMOS digital integrated circuits; CMOS digital integrated circuits; delays; integrated circuit design; switching; BSIM3V2 model equation; CMOS inverter delay analysis; PSPICE BiCMOS delay results; digital circuits; low-voltage BiCMOS; low-voltage CMOS; switching delay reduction technique; technology impact; BiCMOS integrated circuits; CMOS digital integrated circuits; CMOS technology; Delay; Differential equations; Digital circuits; Inverters; SPICE; Semiconductor device modeling; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '98. Proceedings. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4391-3
Type
conf
DOI
10.1109/SECON.1998.673319
Filename
673319
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