DocumentCode
3205805
Title
The Effects of High Energy Protons on Shielded Space Solar Cells
Author
Warner, Jeffrey H. ; Messenger, Scott R. ; Walters, Robert J. ; Summers, Geoffrey P.
Author_Institution
US Naval Res. Lab., Washington, DC
Volume
2
fYear
2006
fDate
38838
Firstpage
1854
Lastpage
1857
Abstract
We discuss the applicability of the displacement damage dose method and the non-ionizing energy loss (NIEL) concept to the effect of protons on GaAs devices. Comparison of the relative damage coefficients (RDCs) for different GaAs devices with the energy dependence of the proton NIEL shows differences for proton energies >10 MeV. However, since actual RDCs are always bound between the total and Coulombic NIELs, calculations were performed for the total displacement damage dose using both NIEL curves to determine the range of dose expected for devices shielded with various thickness of fused silica coverglass. These calculations were performed for two different incident proton spectra. The overall effect of using the total or Coulombic NIEL for calculating the total displacement dose deposited is minimal until extreme thicknesses of shielding are used
Keywords
III-V semiconductors; gallium arsenide; glass; proton effects; shielding; silicon compounds; solar cells; space power generation; Coulombic nonionizing energy loss; GaAs; GaAs devices; SiO2; fused silica coverglass; high-energy proton effects; relative damage coefficients; solar cell shielding; space solar cells; total displacement damage dose method; total nonionizing energy loss; Distributed control; Energy conversion; Energy loss; Gallium arsenide; Laboratories; Light emitting diodes; Photovoltaic cells; Photovoltaic systems; Protons; Solar power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location
Waikoloa, HI
Print_ISBN
1-4244-0017-1
Electronic_ISBN
1-4244-0017-1
Type
conf
DOI
10.1109/WCPEC.2006.279855
Filename
4060021
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