DocumentCode :
3205870
Title :
Extension of QSSPC Lifetime Measurement to Germanium Samples
Author :
Cornagliotti, E. ; Agostinelli, G. ; van der Heide, J. ; Posthuma, N.E. ; Beaucarne, G. ; Poortmans, J.
Author_Institution :
IMEC, Leuven
Volume :
2
fYear :
2006
fDate :
38838
Firstpage :
1869
Lastpage :
1871
Abstract :
QSSPC (quasi-steady-state photo-conductance) is a well-known technique for lifetime measurement, but up to now its use has been limited to silicon. In this paper we describe a simple method to extend this technique to germanium samples. The significant differences between silicon and germanium are separately analyzed. For each of these differences the correction to be made is described. With this procedure the distinctive features that made this technique so successful and widespread are maintained
Keywords :
carrier lifetime; elemental semiconductors; germanium; photoconductive cells; photoconductivity; semiconductor device testing; solar cells; Ge; QSSPC lifetime measurement; photovoltaic cells; quasisteady-state photo-conductance; solar cells; Charge carrier density; Charge carrier lifetime; Charge carrier processes; Electron mobility; Germanium; Lifetime estimation; Lighting; Passivation; Photovoltaic cells; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279859
Filename :
4060025
Link To Document :
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