DocumentCode :
3205918
Title :
Lightweight, Flexible, High-Efficiency III-V Multijunction Cells
Author :
Law, Daniel C. ; Edmondson, K.M. ; Siddiqi, N. ; Paredes, A. ; King, R.R. ; Glenn, G. ; Labios, E. ; Hadd, M.H. ; Isshiki, T.D. ; Karam, N.H.
Author_Institution :
Spectrolab. Inc., Sylmar, CA
Volume :
2
fYear :
2006
fDate :
38838
Firstpage :
1879
Lastpage :
1882
Abstract :
Large-area (26.6 cm2), thin GaInP/GaInAs/Ge triple-junction (TJ) solar cells with thickness as low as 50 mum were demonstrated. The average conversion efficiency of fifty thin TJ cells is 28 %, 1-sun AMO. The thin TJ cells showed nominal performance after welding of interconnects and flexibility test (50 mm curvature radius). Prototype coupons made with these thin TJ cells met flexible solar module bending requirement of 100 mm radius. The thin-cell coupons showed a specific power of 500 W/kg and a power density of 325 W/m2 . Ultra-thin (<10 mum thick) GaInP/Ga(In)As dual-junction (DJ) cells with size ranges from 0.5 to 26.6 cm2 were fabricated using 4" Ge or GaAs wafers. Preliminary test data of the ultra-thin DJ cells showed a specific power of 2067 W/kg and a power density of 283 W/m2. The ultra-thin solar cells continued to demonstrate nominal performance after handling and flexing to a radius of 12 mm. Our results suggested that both the thin cell and the ultra-thin cell technologies can be incorporated with current and future solar cell designs
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; semiconductor heterojunctions; solar cells; thin film devices; welding; 100 mm; 12 mm; 28 percent; 50 mm; GaInP-GaInAs-Ge; average conversion efficiency; flexibility test; flexible III-V multijunction cells; flexible solar module bending; handling; high-efficiency III-V multijunction cells; lightweight III-V multijunction cells; power density; prototype coupons; semiconductor wafers; solar cell designs; thin semiconductor triple-junction solar cells; thin-cell coupons; ultra-thin semiconductor dual-junction cells; welding; Costs; Crystallization; Gallium arsenide; III-V semiconductor materials; Photovoltaic cells; Production; Space technology; Substrates; Testing; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279862
Filename :
4060028
Link To Document :
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