A new adustable Schmitt Trigger based on Dual Control Gate-Floating Gate Transistor (DCG-FGT)

Author

Marzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J.-M. ; Bouchakour, R.

Author_Institution

ST-Microelectron., Rousset, France

fYear

2012

fDate

5-8 Aug. 2012

Firstpage

643

Lastpage

645

Abstract

This paper presents a low voltage adjustable CMOS Schmitt trigger using DCG-FGT transistor. Simple circuit is introduced to provide flexibility to program the hysteretic threshold in this paper. The hysteresis can be controlled accurately at a large voltage range. The proposed Schmitt trigger has been designed using 90nm 1.2V CMOS technology and simulated using Eldo with PSP device models. The simulation results show rail-to-rail operation and independently adjustable switching voltages V_TH- (low switching voltage) and V_TH+(high switching voltage).

Keywords

CMOS integrated circuits; MOSFET; logic design; low-power electronics; trigger circuits; CMOS technology; DCG-FGT transistor; Eldo device models; MOSFET; PSP device models; adjustable Schmitt trigger; adjustable switching voltages; dual control gate-floating gate transistor; hysteretic threshold; low voltage adjustable CMOS Schmitt trigger; rail-to-rail operation; size 90 nm; voltage 1.2 V; voltage range; CMOS integrated circuits; Hysteresis; Inverters; Logic gates; Switches; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on

Conference_Location

Boise, ID

ISSN

1548-3746

Print_ISBN

978-1-4673-2526-4

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2012.6292102

Filename

6292102