A 0.8 GHz to 1 GHz 0.25 μm CMOS low noise amplifier for multi-standard receiver

Author

Mustaffa, M.T. ; Zayegh, A. ; Veljanovski, R. ; Stojcevski, A.

Author_Institution

Sch. of Electr. Eng., Victoria Univ., Melbourne, VIC

fYear

2007

fDate

25-28 Nov. 2007

Firstpage

1350

Lastpage

1354

Abstract

A single-ended low noise amplifier (LNA) for a multi-standard (800 to 1000 MHz) mobile receiver that covers GSM and 3G respectively, has been designed and simulated in a 0.25 mum CMOS technology process. This LNA makes part of a larger system to cover GSM and 3G bands from 800 to 2100 MHz but this work only focuses on lower bands. The circuit topology is based on inductively degenerated common source (IDCS). Circuit simulations indicate a power gain of 12 dB, a noise figure of 0.7 dB with IIP3 and 1-dB compression point of 0.87 dBm and -2.7 dBm respectively. The current consumption for this circuit is 8.3 mA with voltage supply of 2.5 V.

Keywords

3G mobile communication; CMOS integrated circuits; cellular radio; low noise amplifiers; network topology; radio receivers; 3G; CMOS low noise amplifier; GSM; LNA; circuit simulations; circuit topology; current 8.3 mA; frequency 0.8 GHz to 1 GHz; gain 12 dB; inductively degenerated common source; mobile receiver; multistandard receiver; noise figure; voltage 2.5 V; CMOS process; CMOS technology; Circuit simulation; Circuit topology; Communication standards; GSM; Intelligent systems; Low-noise amplifiers; Multiaccess communication; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent and Advanced Systems, 2007. ICIAS 2007. International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-1355-3

Electronic_ISBN

978-1-4244-1356-0

Type

conf

DOI

10.1109/ICIAS.2007.4658604

Filename

4658604