RF-stressed life test of pseudomorphic InGaAs power HEMT MMIC at 44 GHz

Author

Chen, C.H. ; Zell, G. ; Saito, Yuya ; Yen, H.C. ; Lai, Richard ; Kin Tan ; Loper, J.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

713

Abstract

An RF-stressed accelerated life test was performed to establish the reliability of the recently developed high power HEMT MMICs at 44 GHz. The results showed a MTF (median time to failure) of 1.7/spl times/10/sup 6/ hours at 125/spl deg/C channel temperature with the activation energy of 1.6 eV. The failure mode was a gradual output power degradation. A combination of surface states degradation and gate sinking were postulated as the failure mechanisms.<>

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; failure analysis; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit reliability; integrated circuit testing; life testing; millimetre wave amplifiers; power HEMT; power amplifiers; power integrated circuits; surface states; 1.6 eV; 1.7E6 hour; 125 C; 44 GHz; EHF; InGaAs; MTF; RF-stressed life test; accelerated life test; failure mode; gate sinking; gradual output power degradation; median time to failure; power HEMT MMIC; pseudomorphic power HEMT; reliability; surface states degradation; Degradation; Failure analysis; HEMTs; Indium gallium arsenide; Life estimation; Life testing; MMICs; Performance evaluation; Power generation; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406008

Filename

406008