DocumentCode
3206913
Title
The origin of the I1d excitonic emission in ZnSe
Author
Wheeler, E.D. ; Boone, Jack L.
Author_Institution
Dept. of Electr. Eng., Virginia Mil. Inst., Lexington, VA, USA
fYear
1998
fDate
24-26 Apr 1998
Firstpage
275
Lastpage
276
Abstract
An investigation employing nuclear transmutation to probe the effects of copper doping in ZnSe is presented. Three experimental observations are reported in this investigation. With the first, as-grown ZnSe is irradiated with thermal neutrons which results, after thermal annealing, in the incorporation of CuZn centers. Results are consistent with isolated CuZn being involved in the copper-red and copper-green emissions in ZnSe but not in the I1 d excitonic emission. Next are annealing experiments of as-grown wafers of ZnSe which are thermally annealed in a zinc-rich atmosphere. After annealing, the wafers show a remarkable reduction in the I1d emission. Finally, we report observations of homoepitaxial layers of ZnSe grown from elemental zinc and selenium. In these experiments, we have seen that the I1d can be greatly reduced, often eliminated, by growing the layers in a zinc-rich atmosphere. All three observations are consistent with the I 1d emission being associated with VZn but not with CuZn centers,
Keywords
II-VI semiconductors; copper; excitons; neutron effects; visible spectra; zinc compounds; I1d excitonic emission; ZnSe; ZnSe:Cu; thermally annealed; Annealing; Atmosphere; Copper; Luminescence; Microscopy; Neutrons; Photoluminescence; Photonic band gap; Semiconductor impurities; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '98. Proceedings. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4391-3
Type
conf
DOI
10.1109/SECON.1998.673348
Filename
673348
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