• DocumentCode
    3206913
  • Title

    The origin of the I1d excitonic emission in ZnSe

  • Author

    Wheeler, E.D. ; Boone, Jack L.

  • Author_Institution
    Dept. of Electr. Eng., Virginia Mil. Inst., Lexington, VA, USA
  • fYear
    1998
  • fDate
    24-26 Apr 1998
  • Firstpage
    275
  • Lastpage
    276
  • Abstract
    An investigation employing nuclear transmutation to probe the effects of copper doping in ZnSe is presented. Three experimental observations are reported in this investigation. With the first, as-grown ZnSe is irradiated with thermal neutrons which results, after thermal annealing, in the incorporation of CuZn centers. Results are consistent with isolated CuZn being involved in the copper-red and copper-green emissions in ZnSe but not in the I1 d excitonic emission. Next are annealing experiments of as-grown wafers of ZnSe which are thermally annealed in a zinc-rich atmosphere. After annealing, the wafers show a remarkable reduction in the I1d emission. Finally, we report observations of homoepitaxial layers of ZnSe grown from elemental zinc and selenium. In these experiments, we have seen that the I1d can be greatly reduced, often eliminated, by growing the layers in a zinc-rich atmosphere. All three observations are consistent with the I 1d emission being associated with VZn but not with CuZn centers,
  • Keywords
    II-VI semiconductors; copper; excitons; neutron effects; visible spectra; zinc compounds; I1d excitonic emission; ZnSe; ZnSe:Cu; thermally annealed; Annealing; Atmosphere; Copper; Luminescence; Microscopy; Neutrons; Photoluminescence; Photonic band gap; Semiconductor impurities; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Southeastcon '98. Proceedings. IEEE
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-4391-3
  • Type

    conf

  • DOI
    10.1109/SECON.1998.673348
  • Filename
    673348