DocumentCode :
3207056
Title :
Recovery of Light Induced Degradation in Amorphous Silicon Solar Cells and Modules
Author :
Luczak, K. ; Lund, C.P. ; Jennings, P.J. ; Cornish, J.C.L.
Volume :
2
fYear :
2006
fDate :
38838
Firstpage :
2120
Lastpage :
2123
Abstract :
This study concentrates on finding a possible method of annealing amorphous silicon solar modules degraded by prolonged exposure to light. The aim of annealing is the recovery of initial efficiency. This should be done on the module´s work site or through simple indoor maintenance. Ideally the annealing temperature should be as low as possible and the annealing time as short as possible. The annealing process of laboratory cells and commercially available triple junction solar modules was performed at temperatures 70 degC-110 degC. The degree of efficiency recovery as a function of temperature and time of exposure to heating was investigated. The influence of factors affecting the rate of degradation and recovery such as short-circuiting, work under load or exposure to light, were also taken into account
Keywords :
amorphous semiconductors; annealing; elemental semiconductors; semiconductor junctions; silicon; solar cells; 70 to 110 C; Si; amorphous silicon solar cells; annealing; heating treatment; light induced degradation; triple junction solar modules; Amorphous silicon; Annealing; Australia; Degradation; Heat recovery; Laboratories; Nanotechnology; Photovoltaic cells; Sun; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
Type :
conf
DOI :
10.1109/WCPEC.2006.279923
Filename :
4060089
Link To Document :
بازگشت