Comparison of the phase noise performance of HEMT and HBT based oscillators

Author

Xiangdong Zhang ; Sturzebecher, Dana ; Daryoush, Afshin S.

Author_Institution

Drexel Univ., Philadelphia, PA, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

697

Abstract

This paper presents a comparative study on the phase noise contribution of HBT and HEMT oscillators. For a quantitative comparison, HBT and HEMT oscillators were constructed at 5.6 GHz using the same circuit topology. Experimental results show that the low-frequency (LF) noise (i.e. 1/f noise) in HBT is relatively lower than that in HEMT; however, the lowest phase noise can be achieved in the HEMT oscillator due to its low LF noise up-conversion to the phase noise. A proposed theoretical model explains the difference in noise up-conversion performance of HEMT and HBT. The experimental investigation emphasizes the importance of LF noise level and its up-conversion factor in the design of microwave oscillators.<>

Keywords

HEMT circuits; circuit noise; heterojunction bipolar transistors; microwave oscillators; phase noise; 1/f noise; 5.6 GHz; HBT based oscillators; HEMT based oscillators; LF noise; SHF; low-frequency noise; microwave oscillators; model; noise up-conversion performance; phase noise performance; Circuit noise; Circuit topology; Frequency; HEMTs; Heterojunction bipolar transistors; Laboratories; Low-frequency noise; Microwave devices; Microwave oscillators; Phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406012

Filename

406012