Effect of nonparabolicity on Quantum Well laser of low band gap semiconductors

Author

Bhattacharyya, Souvik ; Dey, Anamika ; Maiti, Bikas

Author_Institution

Dept. of ECE, Budge Budge Inst. of Technol., Kolkata, India

fYear

2013

fDate

13-15 Dec. 2013

Firstpage

1

Lastpage

5

Abstract

Three energy band model of Kane has been used to develop a general theory of optical gain for Quantum Well (QW) laser of low band gap semiconductors. Wave vector equation dependence on optical matrix element (OME) has been incorporated in determining the laser gain for these semiconductors having nonparabolic energy band profile. The effect of nonparabolicity is seen to increase the monochromaticity of laser. Intraband scattering and auger recombination present in the system have been found to play a major role in shifting the gain peak towards shorter wavelength, reduce line width and decrease the peak gain.

Keywords

Auger effect; energy gap; laser beams; laser theory; quantum well lasers; QW laser; auger recombination; energy band model; intraband scattering; laser gain; laser monochromaticity; low band gap semiconductors; nonparabolic energy band profile; optical gain; optical matrix element; quantum well laser; wave vector dependence; Laser modes; Laser theory; Optical scattering; Photonic band gap; Quantum well lasers; Radiative recombination; Auger Recombination; Interband Scattering; Intraband Scattering; Kane Model; Nonparabolic Band; Optical Gain; Optical Matrix Element; Quantum Well Laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Photonics (ICMAP), 2013 International Conference on

Conference_Location

Dhanbad

Print_ISBN

978-1-4799-2176-8

Type

conf

DOI

10.1109/ICMAP.2013.6733519

Filename

6733519