Who was Benjamin Dasher?

Benjamin J. Dasher was born December 27, 1912 in Macon, GA, USA. He earned his bachelor\´s and master\´s degrees in electrical engineering in 1935 and 1945, respectively, and graduated with a doctorate in electrical engineering in 1952 from the Massachusetts Institute of Technology. At MIT, Dr. Dasher worked on the electronics of instrumentation of electromechanical transducers and analog-to-digital (A/D) converters. He was the author of "Dasher\´s method" for synthesis of resistance-capacitance two-port networks, which is found in standard textbook treatments. Each year the best paper/presentation combination at the FIE meeting is selected to receive the Ben Dasher Award. Papers are nominated for the award by reviewers. A committee with representation from each of the organizing societies (ERM, IEEE Ed. Soc., IEEE Comp. Soc.) is formed to review nominated papers. During the FIE meeting, the committee attends presentations of the nominated papers. The committee then makes a final recommendation to the FIE Planning Committee for the Ben Dasher Award winner based on the overall quality of both the paper and the presentation. The winning author(s) are announced at the following year\´s FIE meeting.