Performance analysis of III–V based long wavelength QWIP

Author

Billaha, Md Aref ; Das, Manab Kr

Author_Institution

Dept. of Electron. Eng., Indian Sch. of Mines, Dhanbad, India

fYear

2013

fDate

13-15 Dec. 2013

Firstpage

1

Lastpage

4

Abstract

Aim of the present work is to investigate the performance of GaAs/Al_xGa_1-xAs quantum well infrared photodetector (QWIP) using theoretical modeling via transfer matrix method and using professional device simulation software, APSYS. Model is verified with experimental data and various performance characteristics are obtained for intersubband transition in QWIP. Peak absorption occurs at wavelength of 8.75 μm using APSYS and at 8.52 μm using theoretical calculation.

Keywords

III-V semiconductors; absorption; aluminium compounds; electronic engineering computing; gallium arsenide; matrix algebra; photodetectors; quantum well devices; semiconductor device models; semiconductor quantum wells; APSYS; GaAs-Al_xGa_1-xAs; III-V-based long-wavelength QWIP; intersubband transition; peak absorption; professional device simulation software; quantum well infrared photodetector; theoretical calculation; theoretical modeling; transfer matrix method; wavelength 8.52 mum; wavelength 8.75 mum; Absorption; Dark current; Detectors; Electric fields; Gallium arsenide; Performance evaluation; Photodetectors; Intersubband absorption; Quantum wells; dark current; responsivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Photonics (ICMAP), 2013 International Conference on

Conference_Location

Dhanbad

Print_ISBN

978-1-4799-2176-8

Type

conf

DOI

10.1109/ICMAP.2013.6733550

Filename

6733550