Title :
Performance analysis of III–V based long wavelength QWIP
Author :
Billaha, Md Aref ; Das, Manab Kr
Author_Institution :
Dept. of Electron. Eng., Indian Sch. of Mines, Dhanbad, India
Abstract :
Aim of the present work is to investigate the performance of GaAs/AlxGa1-xAs quantum well infrared photodetector (QWIP) using theoretical modeling via transfer matrix method and using professional device simulation software, APSYS. Model is verified with experimental data and various performance characteristics are obtained for intersubband transition in QWIP. Peak absorption occurs at wavelength of 8.75 μm using APSYS and at 8.52 μm using theoretical calculation.
Keywords :
III-V semiconductors; absorption; aluminium compounds; electronic engineering computing; gallium arsenide; matrix algebra; photodetectors; quantum well devices; semiconductor device models; semiconductor quantum wells; APSYS; GaAs-AlxGa1-xAs; III-V-based long-wavelength QWIP; intersubband transition; peak absorption; professional device simulation software; quantum well infrared photodetector; theoretical calculation; theoretical modeling; transfer matrix method; wavelength 8.52 mum; wavelength 8.75 mum; Absorption; Dark current; Detectors; Electric fields; Gallium arsenide; Performance evaluation; Photodetectors; Intersubband absorption; Quantum wells; dark current; responsivity;
Conference_Titel :
Microwave and Photonics (ICMAP), 2013 International Conference on
Conference_Location :
Dhanbad
Print_ISBN :
978-1-4799-2176-8
DOI :
10.1109/ICMAP.2013.6733550
