DocumentCode
3208408
Title
Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 µm
Author
Basu, Rohini ; Chakraborty, Vedatrayee ; Mukhopadhyay, Bodhibrata ; Basu, Palash Kumar
Author_Institution
EEE Dept., BITS Pilani, Pilani, India
fYear
2013
fDate
13-15 Dec. 2013
Firstpage
1
Lastpage
5
Abstract
Alloys of Ge and Sn grown on Si platform show about tenfold increase in absorption over Ge at L-band due to direct nature of the band gap. We have made use of it by designing a Ge/GeSn/GeSn heterophototransistor on Si. A thermionic-field-diffusion model is employed to calculate the current, optical gain and responsivity. The values are comparable with those for InP/InGaAs/InGaAs Npn devices.
Keywords
absorption; diffusion; elemental semiconductors; germanium compounds; phototransistors; silicon; Ge-GeSn; Si; absorption; heterophototransistor; optical gain; responsivity; thermionicfield- diffusion model; Absorption; Current density; Indium gallium arsenide; Metals; Photoconductivity; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Photonics (ICMAP), 2013 International Conference on
Conference_Location
Dhanbad
Print_ISBN
978-1-4799-2176-8
Type
conf
DOI
10.1109/ICMAP.2013.6733553
Filename
6733553
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