Title :
On the temperature dependent efficiency of SiGe/Si heterojunction solar cell
Author :
Choudhary, Santosh K. ; Das, Manab Kr
Author_Institution :
Dept. of Electron. Eng., Indian Sch. of Mines, Dhanbad, India
Abstract :
In this paper we present the model for Si1-xGex/Si heterojunction solar cell considering the effect of heterointerface carrier confinement. The effect of carrier confinement again depends on temperature of operation and device structure. Mainly the effect of temperature is considered in this article and the variation of efficiency of solar cell with temperature is reported here. Results show that the effect of temperature on the efficiency is nonlinear for high value of x, whereas it is linear for low x (<;0.1). Maximum efficiency of 17% is obtained at 300°K.
Keywords :
Ge-Si alloys; elemental semiconductors; silicon; solar cells; Si1-xGex-Si; heterointerface carrier confinement effect; heterojunction solar cell; temperature 300 K; temperature dependent efficiency; Charge carrier processes; Heterojunctions; Photoconductivity; Photovoltaic cells; Silicon; Silicon germanium; Si/SiGe; carrier confinement; efficiency; heterojunction; solar cells;
Conference_Titel :
Microwave and Photonics (ICMAP), 2013 International Conference on
Conference_Location :
Dhanbad
Print_ISBN :
978-1-4799-2176-8
DOI :
10.1109/ICMAP.2013.6733560
