50% high efficiency 1 W power heterojunction FET for 3.5 V CDMA cellular phones

Author

Yamaguchi, Keiko ; Iwata, Naotaka ; Tomita, Masatoshi

Author_Institution

Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan

Volume

3

fYear

1997

fDate

2-5 Dec 1997

Firstpage

1105

Abstract

This paper describes 950 MHz power performance of a double-doped AlGaAs/InGaAs/AlGaAs heterojunction FET (HJFET) operated at 3.5 V drain bias voltage (V_ds) for CDMA cellular phones. A 20 mm gate width HJFET delivered a power-added efficiency (PAE) of 50%, an output power of 1.0 W and an associated gain of 16.1 dB with an adjacent channel leakage power ratio (ACPR) of -42 dBc at 0.9 MHz off-center frequency. High efficiency performance was achieved over a wide range of an output power level by controlling a gate bias voltage. Even at a low V_ds of 2.0 V, PAE of 44% was achieved with 0.3 W output power and -42 dBc ACPR

Keywords

III-V semiconductors; UHF field effect transistors; aluminium compounds; cellular radio; code division multiple access; gallium arsenide; indium compounds; junction gate field effect transistors; power field effect transistors; telephone sets; 1 W; 16.1 dB; 3.5 V; 50 percent; 950 MHz; AlGaAs-InGaAs-AlGaAs; CDMA cellular phone; adjacent channel leakage power ratio; double-doped AlGaAs/InGaAs/AlGaAs power heterojunction FET; gain; output power; power added efficiency; Cellular phones; FETs; Frequency; Gallium arsenide; Heterojunctions; Multiaccess communication; Power generation; Quadrature phase shift keying; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific

Print_ISBN

962-442-117-X

Type

conf

DOI

10.1109/APMC.1997.656418

Filename

656418