Effect of radical oxygen gas exposure on Pt field emitter fabricated by electron-beam induced deposition

The fabrication process of Pt field emitters with tip radii less than 10 nm and gate diameters ranging from 100 to 800 nm using focused ion beam (FIB) induced physical sputtering and EBID was developed. However, the Pt field emitter fabricated by EBID has an inherent issue of leakage current between the gate and cathode electrode due to the unwanted deposition at a gate insulator sidewall. Therefore the generation mechanism of leakage current and the decrease of leakage current of field emitters by a post treatment with radical oxygen gas exposure were studied.