Processing and device issues in GaN and related compounds

In this talk, we describe our work on photoelectrochemical (PEC) etching of GaN as a tool for material characterization and device fabrication. Revelations of defect structures especially edge and screw dislocations in n-GaN were discussed. We also describe our work on developing thermally stable ohmic and Schottky contacts, inductively-coupled-plasma reactive ion etching (ICP-RIE) for device fabrication. Lastly, results on DC, RF, CW power and microwave noise for AlGaN/GaN HFETs were presented and discussed in the context of GaN material quality