Novel dielectric materials for future transistor generations

Summary form only given. To meet the need for higher transistor speed while keeping power consumption under control, the semiconductor industry is working to introduce high-k gate dielectrics in leading-edge transistor manufacturing processes. However, these attempts are hampered by issues with high-k device performance, which were not fully anticipated at the start of high-k development. These issues may be of intrinsic material nature, process tool related, or related to material integration within the fabrication process. In addressing this question, the fundamental factors controlling the value of dielectric constants, along with the major factors determining integration of new materials into the mainstream manufacturing, are discussed in this presentation