DocumentCode :
3209774
Title :
A Linearly Tuneable Ultra Low Power CMOS transconductor with its application to Gm-C filters
Author :
Mohammadi, Laya ; Jannesari, Abumoslem
Author_Institution :
TarbiatModares Univ., Tehran, Iran
fYear :
2012
fDate :
15-17 May 2012
Firstpage :
6
Lastpage :
11
Abstract :
A fully CMOS gm block for low voltage, low power, and wide tuning range is presented in this paper. The relative tuning range of 25 is achieved in this transconductor while only consumes 318 μW with 1.2 V supply voltage in TSMC 0.18 μm CMOS process. The wide tuning range transconductor would be appropriate for multi-mode direct conversion receivers. This wide tuning range transconductor is used in the third order channel selection Butterworth filter to show a good tuning range from 500KHz to 10 MHz which covers several communication standards, such as Bluetooth (650 kHz), cdma2000 (700 kHz), Wideband CDMA (2.2 MHz), IEEE 802.11a/g (10 MHz). The wide tuning range has been achieved without using switchable components or programmable building blocks. It is achieved by changing the bias current.
Keywords :
3G mobile communication; Bluetooth; Butterworth filters; CMOS integrated circuits; code division multiple access; low-power electronics; receivers; wireless LAN; Bluetooth; Gm-C filter; IEEE 802.11a/g; TSMC 0.18 μm CMOS process; Wideband CDMA; bias current; cdma2000; frequency 10 MHz; frequency 2.2 MHz; frequency 500 kHz to 10 MHz; frequency 650 kHz; frequency 700 kHz; fully CMOS Gm block; linearly tuneable ultra low power CMOS transconductor; multimode direct conversion receiver; power 318 muW; size 0.18 mum; third order channel selection Butterworth filter; voltage 1.2 V; wide tuning range transconductor; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Harmonic analysis; Silicon germanium; Tuning; Gm- C filters; direct conversion receiver; low power; strong inversion region; transconductance; weak inversion region; wide tuning range;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering (ICEE), 2012 20th Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4673-1149-6
Type :
conf
DOI :
10.1109/IranianCEE.2012.6292312
Filename :
6292312
Link To Document :
بازگشت