• DocumentCode
    3209792
  • Title

    PIC-MCC modeling of dusty plasma

  • Author

    Gupta, S. ; Gupta, N.

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
  • fYear
    2009
  • fDate
    1-5 June 2009
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given: Dust particles may occur in RF (radio-frequency) discharges for a host of reasons; these include gas-phase nucleation and coagulation within the plasma itself and trapping of dust particles from sputtering and etching of wall material and other external sources. The dust particles are most often negatively charged due to electron capture from the plasma. When the amount of dust accumulation is sufficiently large, it modifies the plasma evolution and the discharge characteristics. In this work, we develop a PIC-MCC based two dimensional model to study the behaviour of a dusty radio frequency discharge in Argon. The simulation model effectively includes not only the ion and electron interaction with each other and the neutral gas molecules but also charged-particle interactions with the dust. The dust particles are assumed to be immobile, however their charge content and mass may grow due to capture of electrons or positive ions. Scattering interactions are also modeled. The evolution of the discharge parameters are traced under the dynamically changing dust content. The effect of various parameters like gas pressure and initial dust loading are studied. The evolution of the charge on the dust plasma and the corresponding change in discharge parameter is traced.
  • Keywords
    argon; discharges (electric); dusty plasmas; plasma simulation; Ar; PIC-MCC gas pressure; PIC-MCC modeling; charged-particle interactions; dust accumulation; dusty plasma; dusty radio frequency discharge; electron capture; electron interaction; etching; gas-phase nucleation; neutral gas molecules; radio-frequency discharges; scattering interactions; wall material; Coagulation; Dusty plasma; Electron traps; Fault location; Plasma applications; Plasma materials processing; Plasma properties; Plasma simulation; Plasma sources; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science - Abstracts, 2009. ICOPS 2009. IEEE International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    0730-9244
  • Print_ISBN
    978-1-4244-2617-1
  • Type

    conf

  • DOI
    10.1109/PLASMA.2009.5227232
  • Filename
    5227232