Title :
A 3.3 V, 1.4 W GaAs power amplifier for CDMA/AMPS dual-mode cellular phone
Author :
Maeng, S.-J. ; Lee, Ching-Sung ; Youn, K.-J. ; Lee, J.-L. ; Park, Hyung-Min
Author_Institution :
Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
For CDMA/AMPS dual-mode cellular phones, a power amplifier operating at 3.3 V has been developed for the first time. The amplifier shows an output power of 31.5 dBm and a power-added efficiency of 61% for AMPS mode. The third order intermodulation and the fifth order one are measured to be -32 dBc and -45 dBc at an output power of 26 dBm for CDMA mode. These are good enough for dual-mode requirements.<>
Keywords :
III-V semiconductors; MESFET circuits; UHF power amplifiers; cellular radio; code division multiple access; gallium arsenide; intermodulation; power amplifiers; 1.4 W; 3.3 V; 31.5 dB; 61 percent; 824 to 849 MHz; CDMA/AMPS dual-mode cellular phone; GaAs; UHF operation; intermodulation; power amplifier; Cellular phones; Circuits; Gallium arsenide; MESFETs; Multiaccess communication; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406022
