A 3-ppm/°C bandgap voltage reference using MOSFETs in strong inversion region

Author

Shami, E. ; Shamsi, H.

Author_Institution

Electr. & Comput., K.N. Toosi Univ. of Technol., Tehran, Iran

fYear

2012

fDate

15-17 May 2012

Firstpage

51

Lastpage

54

Abstract

An accurate bandgap voltage reference (BVR) which utilizes the thermal behavior of the threshold voltage and electron mobility of NMOS transistors is presented in this paper. The circuit is based on a well-known addition of a proportional to absolute temperature (PTAT) and complementary to absolute temperature (CTAT) references. The PTAT circuit uses the temperature coefficient (TC) of the electron mobility and the CTAT circuit uses the TC of the threshold voltage to generate accurate PTAT and CTAT currents. The circuit is designed in a 0.18μm CMOS technology. Simulation results show a temperature coefficient (TC) of 3ppm and power supply rejection ratio (PSRR) of 77dB at DC frequency.

Keywords

CMOS analogue integrated circuits; MOSFET; electron mobility; BVR; CMOS technology; CTAT circuit; DC frequency; MOSFET; NMOS transistors; PTAT circuit; bandgap voltage reference; complementary-to-absolute temperature reference; electron mobility; inversion region; power supply rejection ratio; proportional-to-absolute temperature reference; size 0.18 mum; temperature coefficient; thermal behavior; threshold voltage; CMOS integrated circuits; CMOS technology; Bandgap Voltage Reference (BVR); High PSRR; Low TC; Strong Inversion Region;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2012 20th Iranian Conference on

Conference_Location

Tehran

Print_ISBN

978-1-4673-1149-6

Type

conf

DOI

10.1109/IranianCEE.2012.6292321

Filename

6292321